ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,650, issued on June 23, was assigned to QUALCOMM Inc. (San Diego). "Field-effect transistors (FETs) employing thermal expansion of work fun... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,651, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device having a separation str... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,652, issued on June 23. "Local backside contact isolation for merged backside contact patterning" was invented by Gideon Oyibo (Rensselaer,... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,653, issued on June 23, was assigned to BOE TECHNOLOGY GROUP Co. LTD. (Beijing). "Metal oxide thin film transistor, array substrate and dis... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,654, issued on June 23, was assigned to LG Electronics Inc. (Seoul, South Korea). "Graphene-based biosensor" was invented by Jinwoo Sung (S... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,655, issued on June 23, was assigned to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) (Seoul, South Korea). "Met... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,656, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Transistor device with multi-layer ... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,657, issued on June 23, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai). "Super flash and method for manufacturing same"... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,658, issued on June 23, was assigned to Wolfspeed Inc. (Durham, N.C.). "Buried shield structures for power semiconductor devices and relate... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,659, issued on June 23, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor memory structure having drain stre... Read More